Semiconductor bridge explosive device

Ammunition and explosives – Igniting devices and systems – Electrical primer or ignitor

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Details

1022027, 1022029, 10220214, 361248, F42B 313

Patent

active

059124270

ABSTRACT:
This invention discloses a method of fabricating an electroexplosive device which utilizes a semiconductor bridge as an ignition element. The semiconductor bridge is electrically connected to a metal header by a small, low resistance contact to the extension of bridge material and through an insulating silicon substrate to an eutectic bond created by gold plating on the metal header and the silicon. The second electrode of the bridge circuit is connected via wire bonds to one or two conducting pins which penetrate the metal header and are insulated by surrounding glass. A redundant connection via two conducting pins insulated from the header to one electrode of the semiconductor bridge allows a post assembly test of the integrity of the wire bonds, thereby increasing reliability of the device.

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English translation of Japanese patent # 5,133,699.
Benson et al., Semiconductor Bridge: A Plasma Generator for the Ignition of Explosives, Journal of Applied Physics vol. 62, No. 5, Sep. 1, 1987, pp. 1622-1632.

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