Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Wire contact – lead – or bond
Reexamination Certificate
2007-08-07
2007-08-07
Clark, S. V. (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Wire contact, lead, or bond
C257S786000
Reexamination Certificate
active
11432373
ABSTRACT:
The invention provides a bonding pad structure. At least one lower circuit layer is disposed overlying the substrate, wherein the lower circuit layer is a layout of circuit under pad. A top circuit layer is disposed overlying the lower circuit layer, wherein the top circuit layer comprises a top interconnect dielectric layer and a top interconnect pattern in the top interconnect dielectric layer. A top connecting layer is disposed overlying the top circuit layer, electrically connecting the top interconnect pattern. A top pad layer is disposed overlying the top connecting layer. A bonding ball is disposed overlying the top pad layer, wherein sides of the top interconnect pattern do not overlap a region extending inwardly and outwardly from a boundary of the bonding ball within distance of about 2.5μm.
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Chi Kuan-Shou
Hsia Chin-Chiu
Huang Tai-Chun
Lei Ming-Ta
Yao Chih-Hsiang
Birch & Stewart Kolasch & Birch, LLP
Clark S. V.
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