Semiconductor bonding means having an improved capillary and met

Details Semiconductor bonding means having an improved capillary and met Semiconductor bonding means having an improved capillary and met

1989-03-24

1990-03-27

Jordan, M.

Metal fusion bonding

Process

Using high frequency vibratory energy

228 11, B23K 1904

Patent

active

049113500

ABSTRACT:
A wire bonding capillary for a bonding process comprises an elongated capillary body having an axial bore through the body for receiving a wire of a predetermined diameter to be bonded, and a working face on one end of the body for applying force to the bonding wire during the bonding process. The working face includes a first surface portion surrounding the bore and having a first radius of curvature, and a second surface portion adjacent to the first surface portion and having a second radius of curvature smaller than the first radius curvature.

REFERENCES:
patent: 3921884 (1975-11-01), McDonough et al.
patent: 4405074 (1983-09-01), Levintov et al.

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