Semiconductor bond pad structure and method

Details Semiconductor bond pad structure and method Semiconductor bond pad structure and method

1994-01-14

1995-04-04

Dang, Thi

Fishing, trapping, and vermin destroying

437189, 437190, H01L 2100, H01L 2144

Patent

active

054037778

ABSTRACT:
A method for forming an improved bonding pad structure. A bond pad structure is formed by depositing a barrier layer over an underlying region of a semiconductor device, and then depositing a first conductive layer over the barrier layer. The barrier layer and conductive layer are then patterned and etched to define a conductive region. In a preferred embodiment, the conductive region is formed in the shape of a grid. A second conductive layer is deposited over the conductive region and a portion of the exposed underlying region. The second conductive layer makes a good adhesive contact with the underlying region, thus preventing bond pad lift off.

REFERENCES:
patent: 5149671 (1992-09-01), Koh et al.
patent: 5284797 (1994-02-01), Heim
patent: 5316976 (1994-05-01), Bourg, Jr. et al.

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