Semiconductor body with heat sink

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357 71, 357 68, 357 13, H01L 2302

Patent

active

049105833

ABSTRACT:
The invention relates to a semiconductor body, which is composed of at least one semiconductor device, especially one impatt-diode, with integrated heat sink. The series of semiconductor layers, out of which the semiconductor device is produced, is made up of one first p.sup.+ -doped semiconductor layer, which has the function of an etching stop layer, of a contact layer and a buffer layer at the same time.

REFERENCES:
patent: 4091408 (1978-05-01), Lee et al.
patent: 4340900 (1982-07-01), Goronkin
patent: 4374394 (1983-02-01), Camisa
Goldwasser et al., "Highly Reliable Pulsed GaAs Read Diodes", Proceedings of the 5th Biennial Cornell Electrical Engineering Conference, Aug. 19-21, 1975, Ithaca, N.Y., U.S.A., pp. 367-376.

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