Semiconductor body having element formation surfaces with differ

Details Semiconductor body having element formation surfaces with differ Semiconductor body having element formation surfaces with differ

1992-09-30

1995-01-24

Munson, Gene M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

With current flow along specified crystal axis

257369, 257371, 257374, 257513, 257627, H01L 2702, H01L 2904, H01L 2704

Patent

active

053844734

ABSTRACT:
A semiconductor body has a first and a second element formation surface. The semiconductor body is constructed in such a manner that a first semiconductor substrate, which has a first main surface at which the plane appears, is laminated to a second semiconductor substrate, which has a second main surface at which the plane appears. Made in the first semiconductor substrate is at least one opening at which the second main surface of the second semiconductor substrate. The first main surface of the first semiconductor substrate becomes the first element formation surface of the semiconductor body, and the second main surface of the second semiconductor substrate becomes the second element formation surface of the body.

REFERENCES:
patent: 3476991 (1969-11-01), Mize et al.
patent: 3603848 (1971-09-01), Sato et al.
patent: 3612960 (1971-10-01), Takeishi et al.
patent: 3634737 (1972-01-01), Maeda et al.
patent: 4768076 (1988-08-01), Aoki et al.
patent: 4857986 (1989-08-01), Kinugawa
patent: 4878957 (1989-11-01), Yamaguchi et al.

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