Semiconductor blue-green laser diodes

Details Semiconductor blue-green laser diodes Semiconductor blue-green laser diodes

1994-01-28

1994-12-06

Epps, Georgia Y.

Coherent light generators

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Semiconductor

257 13, 257 22, 257 78, 257103, 257200, 372 46, H01S 319

Patent

active

053717562

ABSTRACT:
A semiconductor blue-green light emitting device in a double heterostructure configuration includes a light emitting layer, a p-type clad layer and an n-type clad layer sandwiching the light emitting layer, a cap layer and a contact layer in this sequence formed on the clad layer. The light emitting layer contains at least one of CdZnSe, ZnSSe, and ZnSe, each of the p-type clad layer and the n-type clad layer contains at least one of ZnSSe, ZnSe and ZnMgSSe, the cap layer is of (Al.sub.X Ga.sub.1-X).sub.0.5 In.sub.0.5 P (0.ltoreq.X.ltoreq.1), and the contact layer is of Al.sub.X Ga.sub.1-X As (0.ltoreq.X.ltoreq.1). The diode provided is with improved ohmic characteristics.

REFERENCES:
patent: 4992837 (1991-02-01), Sakai et al.
patent: 5260958 (1993-11-01), Fitzpatrick
patent: 5291506 (1994-03-01), Ahn
patent: 5319219 (1994-06-01), Cheng et al.
Haase et al., "Blue-green laser diodes", Appl. Phys. Lett., vol. 59, No. 11, Sep. 9, 1991, pp. 1272-1274.
Jeon et al., "Blue-green diode lasers in ZnSe-based quantum wells", Appl. Phys. Lett., vol. 60, No. 17, Apr. 27, 1992, pp. 2045-2047.
Okuyama et al., "ZnSe/ZnMgSSe Blue Laser Diode", Electronics Letters, vol. 28, No. 19, Sep. 10, 1992, pp. 1798-1799.
Fan et al., "Graded band gap ohmic contact to p-ZnSe", Appl. Phys. Lett., vol. 61, No. 26, Dec. 28, 1992, pp. 3160-3162.

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