Semiconductor bipolar transistor with concentric regions

Details Semiconductor bipolar transistor with concentric regions Semiconductor bipolar transistor with concentric regions

1992-02-11

1993-08-17

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

With specified shape of pn junction

257592, 257565, H01L 2972, H01L 2936

Patent

active

052372006

ABSTRACT:
A vertical bipolar transistor arrangement in which the distance between the emitter and the isolation region is kept within a range determined by the sum of emitter depth and base width (i.e., the thickness of the base in the depth direction). This keeps the carriers given by the emitter from getting trapped inside, thereby preventing the cut-off frequency from dropping.

REFERENCES:
patent: 3049451 (1962-08-01), Carlat et al.
patent: 3988766 (1976-10-01), Anthony et al.
patent: 4916083 (1990-04-01), Monkowski et al.

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