Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With non-planar semiconductor surface
Reexamination Certificate
2006-03-30
2008-12-02
Wilson, Allan R. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With non-planar semiconductor surface
C257S557000, C257S565000, C257S517000
Reexamination Certificate
active
07459766
ABSTRACT:
A semiconductor device including a bipolar transistor in which the collector resistance. The bipolar transistor includes a first conduction type semiconductor substrate having a main surface. A second conduction type collector region is formed in the semiconductor substrate. A shallow trench isolation structure isolates the main surface of the semiconductor substrate into two insulated active regions. A collector leading portion is formed in one of the active regions. A first conduction type base region and a second conduction type emitter region are formed on the other one of the active regions. The collector region has a first depth from the main surface immediately below the shallow trench isolation structure, and the collector region has a second depth from the main surface immediately below the two active regions. The first depth is less than the second depth.
REFERENCES:
patent: 4047975 (1977-09-01), Widmann
patent: 6476451 (2002-11-01), Wong
patent: 6570242 (2003-05-01), Johnson
patent: 6828635 (2004-12-01), Panday et al.
patent: 6869840 (2005-03-01), Chatterjee et al.
patent: 2004/0000694 (2004-01-01), Johnson
patent: 2004/0253834 (2004-12-01), Mothes et al.
patent: 2004-079719 (2004-03-01), None
patent: 2004-087599 (2004-03-01), None
Kittel, Charles (2005). Introduction to Solid State Physics. (Eighth Edition) New Jersey: John Wiley & Sons, Inc.
Streetman, Ben and Banerjee, Sanjay (2006). Solid State Electronic Devices (sixth ed.). New Jersey: Pearson Prentice Hall. pp. 10-11.
McDermott Will & Emery LLP
Sanyo Electric Co,. Ltd.
Wilson Allan R.
LandOfFree
Semiconductor bipolar transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor bipolar transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor bipolar transistor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4044911