Semiconductor bipolar device with phosphorus doping

Details Semiconductor bipolar device with phosphorus doping Semiconductor bipolar device with phosphorus doping

1990-07-26

1991-10-01

Mintel, William

357 16, 357 63, 357 22, H01L 2972

Patent

active

050538462

ABSTRACT:
A method of manufacturing semiconductor devices by ion implantation, comprising the steps of, i) implanting P ions and ions selected from Si or Group II elements to the same region of GaAs or AlGaAs material, ii) performing a heat treatment to said ion implanted region for activation. Also disclosed are semiconductor devices manufactured according to this method.

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