Semiconductor bipolar-CMOS inverter

Details Semiconductor bipolar-CMOS inverter Semiconductor bipolar-CMOS inverter

1988-02-05

1990-03-06

Mintel, William

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357 46, 357 235, 357 42, 365190, 307446, H01L 2702

Patent

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049070592

ABSTRACT:
A semiconductor device has a first semiconductor region of a first conductivity type; a second semiconductor region of a second conductivity type; an interconnection layer, containing an impurity of a second conductivity type, for connecting the first and second semiconductor regions; and a third semiconductor region of the second conductivity type which is formed in the first semiconductor region upon diffusion of the impurity from the interconnection layer to the first semiconductor region, the first and third semiconductor regions being adapted to form a p-n junction diode.

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patent: 4613886 (1988-09-01), Chwang
patent: 4719373 (1988-01-01), Masuda et al.
Gaensslen et al. IBM Tech. Discl. Bull., vol. 12, No. 12, May 1970, pp. 2327-2328.
European Patent Office Search Report, Jul. 2, 1986 for Application No. 86101172.4.
2087 Elektronik, 33 (1984) Dez., No. 26, Munich, Germany
Ishikawa et al., "An Mo Gate 4K Static MOS RAM," IEEE Transactions on Electron Devices, vol. ED-27, No. 8, pp. 1586-1590, Aug. 1980.
Yu et al., "HMOS-CMOS-A Low-Power High-Performance Technology," IEEE Journal of Solid-State Circuits, vol. SC-16, No. 5, pp. 454, 10/81.

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