Semiconductor bidirectional switch and method of driving the sam

Details Semiconductor bidirectional switch and method of driving the sam Semiconductor bidirectional switch and method of driving the sam

1995-08-08

1996-12-17

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Bidirectional rectifier with control electrode

257119, 257133, 257139, 257140, 257146, 257153, 257167, 257355, 257339, H01L 2974

Patent

active

055856500

ABSTRACT:
High withstand voltage, low on-voltage, low turn-off loss, and high switching speed are realized in semiconductor bidirectional switches in which the potential of the substrate is floating. A switch has a p-type substrate without an electrode, and an n-layer on the substrate. At least one pair of p-well regions and at least one p-region are formed in a surface layer of the n-layer. An n.sup.+ region is formed in the p-well region, and a gate electrode is fixed via an insulation film to the p-well region. A main electrode is fixed to a part of the surface of the n.sup.+ region and the surface of a p.sup.+ contact region in the p-well region.

REFERENCES:
patent: 4947226 (1990-08-01), Huang et al.
"Insulated-Gate Planar Thyristors: II-Quantitative Modeling" by Scharf et al.; IEEE Transactions on Electron Devices, vol. ED-27, No. 2, Feb. 1980; pp. 387-394.

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