Patent
1989-06-30
1991-01-22
Mintel, William
357 18, 357 58, 357 30, H01L 2712
Patent
active
049874586
ABSTRACT:
Continuously tunable, biased, semiconductor superlattice electron interference filter/emitter which can serve, for example, as a hot electron emitter in a ballistic transistor, provides energy selectivity for substantially ballistic electron wave propagation at electron energies above the superlattice potential barriers. The layers of the biased superlattice have alternatively high and low electron refractive indices wherein each layer is a quarter or half of an electron wavelength in thickness and wherein the quantum well barrier widths are adjusted in the direction of emission to provide the desired energy selectivity.
REFERENCES:
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This invention was made with Government support under Contract No. DDAL03-87-K-0059 awarded by U.S. Army Research Office. The Government has certain rights in the invention.
Brennan Kevin F.
Gaylord Thomas K.
Glytsis Elias N.
Einschlag Michael B.
Georgia Tech Research Corporation
Mintel William
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