Semiconductor-based radiation-detector element

Details Semiconductor-based radiation-detector element Semiconductor-based radiation-detector element

1991-05-07

1992-10-20

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 24, 437175, H01L 3115, H01L 2144

Patent

active

051569795

ABSTRACT:
A semiconductor-based radiation-detector element particularly adapted to neutron detection, and the method for making the same, in which a high sensitivity single-crystal semiconductor substrate has diffused therein at-least-one region of .sup.3 He gas, which remain resident therein, whereby, upon application of an inverse bias to the junction in the semiconductor substrate, the colliding of incident neutrons with the resident .sup.3 He gas results in a reaction which produces hole-electron pairs in the depletion layer within the semiconductor, those hole-electron pairs producing output electrical pulses which appear at the output terminals of the detector for utilization by detection and measuring apparatus connected to the semiconductor-based radiation-detector element.

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patent: 4692782 (1987-09-01), Seki et al.
patent: 4746484 (1988-05-01), Jassby
patent: 4896200 (1990-01-01), Seki et al.

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