Semiconductor-based radiation-detector element

Details Semiconductor-based radiation-detector element Semiconductor-based radiation-detector element

1988-12-12

1991-05-28

Larkins, William D.

357 59, H01L 31118, H01L 310376, H01L 310288

Patent

active

050198866

ABSTRACT:
A semiconductor-based radiation-detector element particularly adapted to neutron detection, and the method for making the same, in which a high sensitivity single-crystal semiconductor substrate has diffused therein at-least-one region of .sup.3 He gas, which remains resident therein, whereby, upon application of an inverse bias to the junction in the semiconductor substrate, the colliding of incident neutrons with the resident .sup.3 He gas results in a reaction which produces hole-electron pairs in the depletion layer within the semiconductor, those hole-electron pairs producing output electrical pulses which appear at the output terminals of the detector for utilization by detection and measuring apparatus connected to the semiconductor-based radiation-detector element.

REFERENCES:
patent: H147 (1986-11-01), Feldman
patent: 4419578 (1983-12-01), Kress
patent: 4539431 (1985-09-01), Moddel et al.
patent: 4896200 (1990-01-01), Seki et al.

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