Semiconductor-based encapsulated infrared sensor and...

Details Semiconductor-based encapsulated infrared sensor and... Semiconductor-based encapsulated infrared sensor and...

2005-11-15

2005-11-15

Porta, David (Department: 2878)

Radiant energy

Invisible radiant energy responsive electric signalling

Infrared responsive

C250S353000, C438S456000

Reexamination Certificate

active

06965107

ABSTRACT:
An Al film is formed on a cap wafer and the Al film is patterned into a ring-shaped film. Dry etching is performed by using the ring-shaped film as a mask to form a drum portion enclosing a recess portion to provide a vacuum dome. After forming a depth of cut into the substrate portion of the cap wafer, the cap wafer is placed on a main body wafer having an infrared area sensor formed thereon. Then, the ring-shaped film of the cap wafer and the ring-shaped film of the main body wafer are joined to each other by pressure bonding to form a ring-shaped joining portion.

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Notice of Reasons of Rejection for Patent Application No. 2002-161816 mailed Oct. 21, 2003 and English Translation.

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