Patent
1980-06-20
1982-12-28
Edlow, Martin H.
357 15, 357 65, 357 22, H01L 2712
Patent
active
043664938
ABSTRACT:
A semiconductor device of the ballistic type, wherein the carrier transport in the body of the device from one electrode to the other takes place essentially free of collisions, is fabricated with a semiconductor body having a long mean-free path, a body width between ohmic electrodes that is less than or equal to the product of the velocity of a carrier and the time to a collision, but more than the distance that will permit quantum mechanical tunnelling, an impressed voltage less than required for an intervalley carrier transition and having the ohmic external contact on each surface of the body free of any barrier to carrier flow. A ballistic type triode device is provided with a current modulating electrode included within the body of the device. The triode device body is of n type conductivity gallium arsenide containing a zinc doped p type conductivity gallium arsenide current modulating inclusion in the body and having, as at least one ohmic external contact, a graded bandgap indium gallium arsenide region.
REFERENCES:
patent: 3381188 (1968-04-01), Zuleeg et al.
patent: 3889284 (1975-06-01), Schiel
patent: 4110488 (1980-08-01), Risko
patent: 4183033 (1980-01-01), Rees
patent: 4263605 (1981-04-01), Christou et al.
Electronics Letters, vol. 16, No. 4 (1980).
T. F. Deutsch, D. J. Ehrlich, and R. M. Osgood, Jr., "Laser Photodeposition of Metal Films with Microscopic Features", Applied Physics Letters, 35, No. 2 (1979) pp. 175-177.
J. A. Sze, Physics of Semiconductor Devices, pp. 749-778.
M. S. Shur and L. F. Eastman, "Ballistic Transport in Semiconductor at Low Temperatures for Low-Power High-Speed Logic", IEEE Transactions on Electron Devices, vol. ED-26, No. 11, (1979) pp. 1677-1683.
H. Shichijo, K. Hess and G. E. Stillman, "Orientation Dependence of Ballistic Electron Transport and Impact Ionization".
H. Rees, G. S. Sanghera, and R. A. Warriner, "Low-Temperature F.E. T. for Low-Power High-Speed Logic", Electronics Letters, vol. 13, No. 6 (1977) pp. 156-158.
H. Masuda, M. Nakai and M. Kubo, "Characteristics and Limitation of Scaled-Down MOSFET's Due to Two-Dimensional Field Effect", IEEE Transactions on Electron Devices, vol. ED-26, No. 6, (1979) pp. 980-986.
R. H. Dennard, F. H. Gaensslen, H. N. Yu, V. L. Rideout, E. Bassous and A. R. LeBlanc, "Design of Ion-Implanted MOSFET's With Very Small Physical Dimensions", IEEE Journal of Solid State Circuits, vol. SC9, No. 5, (1974) pp. 256-268.
V. L. Rideout, "A Review of the Theory and Technology for Ohmic Contacts to Group III-V Compound Semiconductors", Solid State Electronics, vol. 18 (1975) pp. 541-550.
W. T. Anderson, Jr., A. Christou and J. E. Davey, "Development of Ohmic Contacts for GaAs Devices Using Epitaxial Ge Films", IEEE Journal of Solid-State Circuits, vol. SC-13, No. 4, (1978) pp. 430-435.
Braslau Norman
Freeouf John L.
Pettit George D.
Rupprecht Hans S.
Woodall Jerry M.
Carroll J.
Edlow Martin H.
International Business Machines - Corporation
Riddles Alvin J.
LandOfFree
Semiconductor ballistic transport device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor ballistic transport device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor ballistic transport device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1340151