Semiconductor ballistic electron velocity control structure

Details Semiconductor ballistic electron velocity control structure Semiconductor ballistic electron velocity control structure

1987-06-12

1991-09-17

Hille, Rolf

357 16, 357 34, 357 58, 357 89, H01L 2980, H01L 29161, H01L 2972, H01L 2912

Patent

active

050499556

ABSTRACT:
A semiconductor device where an emitter material composition and doping profile produces an electron gas in a base adjacent a band offset heterojunction interface, the electrons in the electron gas in the base are confined under bias by a low barrier and the ballistic carriers have their kinetic energy controlled to prevent intervalley scattering by an electrostatic barrier that under influence of bias provides an essentially level conduction band in the portion of the base adjacent the collector.

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