Static information storage and retrieval – Associative memories – Ferroelectric cell
Patent
1990-09-11
1993-10-12
Clawson, Jr., Joseph E.
Static information storage and retrieval
Associative memories
Ferroelectric cell
365177, 36518907, 365208, G11C 1504
Patent
active
052531970
ABSTRACT:
In a first embodiment of a CAM (Content Addressable Memory) or cache memory of the present invention disclosed herein, comparing information stored in a memory cell with comparison input information is accomplished in a comparison circuit without first converting a readout current from the memory cell into voltage information. In another embodiment, a matching detection between first stored information outputted from a first memory cell array and second stored information outputted from a second memory cell array is accomplished by an integrally formed sensing and matching detection circuit which is characterized as having both sensing and matching detection capabilities. That is, the sensing and matching detection circuit senses both stored information and thereafter detects matching based on a sensing result.
REFERENCES:
patent: 4866673 (1989-09-01), Higuchi et al.
patent: 4910711 (1990-03-01), Guo
patent: 4933899 (1990-06-01), Gibbs
patent: 4942555 (1990-07-01), Higuchi et al.
patent: 5014195 (1991-05-01), Farrell et al.
patent: 5034919 (1991-07-01), Sasai et al.
patent: 5046050 (1991-09-01), Kertis
Hanawa Makoto
Hayashi Takehisa
Higuchi Hisayuki
Nishimukai Tadahiko
Shimohigashi Katsuhiro
Clawson Jr. Joseph E.
Hitachi , Ltd.
LandOfFree
Semiconductor associative memory device with current sensing does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor associative memory device with current sensing, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor associative memory device with current sensing will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1911002