Semiconductor arrangement with a p-n transition and method...

Details Semiconductor arrangement with a p-n transition and method... Semiconductor arrangement with a p-n transition and method...

2006-12-26

2006-12-26

Dickey, Thomas L. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Bidirectional rectifier with control electrode

C257S171000

Reexamination Certificate

active

07154129

ABSTRACT:
A semiconductor system (200), particularly a diode, having a p-n junction is proposed, that is formed as a chip having an edge area, which includes a first layer (2) of a first conductivity type and a second layer (1, 3) of a second conductivity type; the second layer (1, 3) including at least two sublayers (1, 3); both sublayers (1, 3) forming a p-n junction with the first layer (2); the p-n junction of the first layer (2) with the first sublayer (3) being provided exclusively in the interior of the chip, and the p-n junction between the first layer (2) and the second sublayer (1) being provided in the edge area of the chip; for each cross-section of the chip area parallel to the chip plane, the first sublayer (3) corresponding only to a part of such a cross-section.

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