Semiconductor arrangement having a MOSFET structure and a...

Details Semiconductor arrangement having a MOSFET structure and a... Semiconductor arrangement having a MOSFET structure and a...

2007-04-03

2007-04-03

Andujar, Leonardo (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Tunneling pn junction device

Reverse bias tunneling structure

C257S288000, C257S551000, C257S603000, C257SE21355

Reexamination Certificate

active

10901634

ABSTRACT:
The invention relates to a semiconductor arrangement having a MOSFET structure and an active zener function. A n+-doped zone and a p+-doped zone are provided at the bottom of a trench for the purpose of forming zener diodes, the n+-doped zone being directly connected to the gate electrode.

REFERENCES:
patent: 2004/0251503 (2004-12-01), Hayashi et al.
patent: 1924207 (1979-01-01), None
patent: 101 23 818 (2002-09-01), None

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