Semiconductor arrangement

Details Semiconductor arrangement Semiconductor arrangement

1972-02-23

1977-03-01

Edlow, Martin H.

Radiant energy

Ionic separation or analysis

Static field-type ion path-bending selecting means

250518, 315302, H01L 2714

Patent

active

040104877

ABSTRACT:
A semiconductor arrangement comprises a region of a second type of conductivity formed in a semiconductor body of a first type of conductivity from one surface thereof, an insulating layer on this surface defining an opening above the said region and a resistance layer covering the opening in the insulating layer and comprising a metal silicide compound of silicon with a metal from the subgroups of groups V or VI of the periodic system which contain tungsten, molybdenum or tantalum.

REFERENCES:
patent: 3419746 (1968-12-01), Crowell et al.
patent: 3428850 (1969-02-01), Crowell et al.
patent: 3559003 (1971-01-01), Beaudouin
patent: 3574143 (1971-04-01), Vratny
patent: 3617824 (1971-11-01), Shinoda
patent: 3642526 (1972-02-01), Itoh
patent: 3668473 (1972-06-01), Miyashow
patent: 3761375 (1973-09-01), Pierce
Handbook of Physics and Chemistry, 44th Edition, Chemical Rubber Publishing Co., Cleveland, Ohio, 1962, p. 1859.

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