Semiconductor apparatus with heat sink

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Bump leads

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Details

257706, 257778, 257587, 361709, H01L 2348, H01L 2944, H01L 2952, H01L 2960

Patent

active

054443008

ABSTRACT:
A semiconductor apparatus is provided which includes a semiconductor chip on its one plane with a plurality of terminal electrodes, which are divided into a plurality of bundles, a bump provided on one of the bundles of terminal electrodes, a connect member of heat conductivity having a plane connected with the plane of the bump, and other connect members for connecting the other bundles of terminal electrodes regardless of the connect member. As a result, the terminal resistance of the semiconductor apparatus is considerably reduced.

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patent: 5216279 (1993-06-01), Nakao
patent: 5285352 (1994-02-01), Pastore et al.
Ultrahigh Power Efficiency Operation of Common-Emitter and Common-Base HBT's at 10 GHz by N. L. Wang et al., from IEEE Transactions on Microwave Theory and Techniques, vol. 38, No. 10, Oct. 1990, pp. 1381-1389.
10-GHz 10-W Internally Matched Flip-Chip GaAs Power FET's by Yasuo Mitsui et al., from IEEE Transactions on Microwave Theory and Techniques, vol. MIT-29, No. 4, Apr. 1981, pp. 304-309.
Carbon-Doped AlGaAs/GaAs HBTs with fmax=117GHz Grown by MOCVD by Hiroya Sato et al., Electronic Communication Society Technical Research Report ED90--135, Jan. 17, 1991, pp. 19-24.
"Controlled Collapse Reflow Chip Joining", L. F. Miller, May 1969 pp. 235-250.
"Flip-Chip Microcircuit Bonding Systems", T. R. Myers, ITT Research Institute, Electronics Research Division, Chicago Illinois, pp. 131-144.
"ICs on strip lend themselves to automatic handling by manufacturer and user, too", Stephen E. Scrupski, Electronics, Feb. 1, 1971, pp. 44-48.
"Tape Automated Bonding Process For High Lead Count", 1983 IEEE, pp. 221-226.

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