Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Bump leads
Patent
1992-08-07
1995-08-22
Limanek, Robert P.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Bump leads
257706, 257778, 257587, 361709, H01L 2348, H01L 2944, H01L 2952, H01L 2960
Patent
active
054443008
ABSTRACT:
A semiconductor apparatus is provided which includes a semiconductor chip on its one plane with a plurality of terminal electrodes, which are divided into a plurality of bundles, a bump provided on one of the bundles of terminal electrodes, a connect member of heat conductivity having a plane connected with the plane of the bump, and other connect members for connecting the other bundles of terminal electrodes regardless of the connect member. As a result, the terminal resistance of the semiconductor apparatus is considerably reduced.
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Ultrahigh Power Efficiency Operation of Common-Emitter and Common-Base HBT's at 10 GHz by N. L. Wang et al., from IEEE Transactions on Microwave Theory and Techniques, vol. 38, No. 10, Oct. 1990, pp. 1381-1389.
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Carbon-Doped AlGaAs/GaAs HBTs with fmax=117GHz Grown by MOCVD by Hiroya Sato et al., Electronic Communication Society Technical Research Report ED90--135, Jan. 17, 1991, pp. 19-24.
"Controlled Collapse Reflow Chip Joining", L. F. Miller, May 1969 pp. 235-250.
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"Tape Automated Bonding Process For High Lead Count", 1983 IEEE, pp. 221-226.
Miyauchi Masato
Sato Hiroya
Arroyo T. M.
Limanek Robert P.
Sharp Kabushiki Kaisha
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