Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
1999-08-10
2001-12-25
Abraham, Fetsum (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S396000, C257S397000, C257S621000, C257S637000, C257S708000, C257S774000
Reexamination Certificate
active
06333519
ABSTRACT:
FIELD OF THE INVENTION AND RELATED ART
The present invention relates to a semiconductor apparatus, a process for production thereof, and a liquid crystal (display) apparatus including the semiconductor apparatus. Particularly, the present invention relates to a semiconductor apparatus including a semiconductor substrate, and a lower conductor film (principal electrode), an insulating layer and an upper conductor film disposed in this order on the semiconductor substrate so that the lower conductor film and the upper conductive film is electrically connected with each other via a contact hole; a process for production of such a semiconductor apparatus; and also a liquid crystal apparatus including such a semiconductor apparatus.
Accompanying recent development of multi-media technology, there is an increasing demand for apparatus or appliances for communication based on picture data. Among these, a liquid crystal display apparatus has called attention because of a small thickness and a low power consumption, and has grown up to a major industry comparable to semiconductor industry. Such a liquid crystal display apparatus has been principally used as a display panel for a notebook-type personal computer, up to a 10-inch size, etc., but will be adopted as a larger picture-size display not only for a personal computer but also for a work station and a home television set.
However, as the picture size is enlarged, the production apparatus is enlarged and becomes expensive, and the production cost for the liquid crystal apparatus is increased abruptly on a square to cubic order of the picture size.
Accordingly, in resent years, an attention has been called to a projection system wherein a small-size liquid crystal display panel is prepared and a picture thereof is projected in an optically enlarged size. This is because recent development in semiconductor technology regarding a higher density and fine device production has allowed performance improvement and cost reduction based on the scaling rule, so that a small-size liquid crystal display panel having improved performances can be produced at a lower production cost.
In recent years, there has been also noted a reflection type liquid crystal panel (liquid crystal display apparatus) including an active matrix circuit together with a peripheral drive circuit formed on a semiconductor substrate of, e.g., Si, and pixel electrodes for driving the liquid crystal at respective pixels also used as a reflection mirror, because of a low cost and a high picture quality.
FIGS. 16
to
27
are schematic sectional views for illustrating sequential process steps for production of a conventional reflection-type liquid crystal panel applied onto a semiconductor substrate for production of pixel electrode structure. In these figures (and also figures for illustrating structures adopted in the present invention), like members are denoted by like reference numerals.
FIG. 16
shows a state wherein a drain electrode
11
has been formed on an insulating layer
8
′ on a semiconductor substrate (not shown).
FIG. 17
shows a state where the drain electrode
11
is further coated with a 5000 Å-thick P-SiO layer
18
-
1
formed by the plasma CVD process and then with a totally 4400 Å-thick SOG layer
18
-
2
formed by two times of spin coating of SiO
2
precursor solution each for providing a 2200 Å-thick layer for providing an improved smoothness (herein, the prefix “P-” used sometimes to indicate that a layer concerned is formed by the plasma CVD process, and the term “SOG layer” is used to indicate a layer formed by spin coating on a (glass) substrate.
Then, a 4000 Å-thick P-SiO layer
8
is formed as an insulating layer again by the plasma CVD process on the SOG layer
18
-
2
. (
FIG. 18
) The insulating layer
8
can also be formed as a P-SiN layer formed by the plasma CVD process.
Then, a 3000 Å-thick Ti layer
7
(masking layer) is formed by sputtering, and a portion thereof at a region for providing a through-hole as a contact hole connecting between pixel-drain electrode is removed (FIG.
19
), by formation of a photoresist pattern and etching with a Cl
1
/BCl
3
mixture gas according to an ECR plasma etching apparatus.
Further, a 4000 Å-thick P-SiN layer
21
(an insulating capacitor film) is formed by the plasma CVD process, and then a 14000 Å-thick P-SiO layer
9
(an insulating layer for pixel electrode separation) is formed by the plasma CVD process. (
FIG. 20
)
Then, the insulating layer
9
is patterned in a pattern suitable for pixel electrode separation (FIG.
21
). The patterning is performed by etching through a patterned photoresist with a CF
4
/Ar mixture gas by means of a parallel flat plate plasma etching apparatus under CF
4
/Ar gas flow rates of 60/800 ccm (c
3
/min), a pressure of 1.0 torr and with a 3800 kHz-high frequency power supply of 750 W. Under the etching condition, the P-SiO layer (to be etched) shows an etching rate of 6500 Å/min relative to 2500 Å/min of the lower P-SiN (selection ratio of ca. 2.5) whereby the P-SiN layer
21
functions as the etching stopper layer.
Then, through steps illustrated in
FIGS. 22-25
, a through-hole for connection between the drain electrode
11
and a pixel electrode is formed. First, a photoresist
500
is applied to cover the patterned insulating layer
9
. (
FIG. 22
) The photoresist
500
is formed in a thickness which is sufficient to cover the patterned insulating layer
8
and will not expose the insulating layer
9
after the etching for providing the through-hole during which the thickness thereof can be reduced by etching. For this reason, the photoresist
500
is required to have a thickness of ca. 2-3 &mgr;m above the surface of the insulating layer
21
.
Then, the resist
500
is patterned by exposure and development (FIG.
23
), the layers
21
,
7
,
8
and
18
(
18
-
1
and
18
-
2
) are etched with a CF
4
/CHF
3
/Ar mixture gas by means of a parallel flat plates plasma etching apparatus (FIG.
24
), and then the photoresist
500
is removed (FIG.
25
). Then, a pixel electrode film
12
is deposited thereon (FIG.
26
), and flattened and separated for respective pixels by the insulating layer
9
by the CMP process (FIG.
27
).
In the above-mentioned prior art process, a large thickness of photoresist
500
is required before formation of the through-hole (FIG.
23
). As a result, the minute patterning by exposure and development of the resist
500
(
FIG. 22
) to provide a patterned resist
500
(
FIG. 23
) becomes difficult, and further the etching for providing a minute pattern of through-holes (
FIG. 24
) becomes difficult due to a large aspect ratio (i.e., a ratio of hole depth/hole diameter).
For the above reasons, the formation of minute through holes is difficult to naturally result in a larger size of through holes and also a larger size of pixels, which have obstructed the production of a higher resolution liquid crystal panel.
SUMMARY OF THE INVENTION
In view of the above-mentioned circumstances of the prior art, a principal object of the present invention is to provide a semiconductor apparatus allowing a minute through-hole, a small pixel size and a higher resolution pixel.
Further objects of the present invention are to provide a process for production of such a semiconductor apparatus, and a liquid crystal (display) apparatus including such a semiconductor apparatus.
According to the present invention, there is provided a semiconductor apparatus, comprising a semiconductor substrate, and a laminate structure formed on the semiconductor substrate including a principal electrode of semiconductor device, a laminate insulating layer and a conductor film disposed in this order on the semiconductor substrate, said principal electrode and said conductor film being electrically connected with each other through a contact hole formed within the laminate insulating layer,
wherein said laminate insulating layer comprise a first insulating layer provided with an aperture defining the contact hole, a secon
Abraham Fetsum
Canon Kabushiki Kaisha
Fitzpatrick ,Cella, Harper & Scinto
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