Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2007-02-27
2007-02-27
Louie, Wai-Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S094000, C257S099000, C257S103000
Reexamination Certificate
active
11365459
ABSTRACT:
A semiconductor apparatus includes a substrate made of a diboride single crystal expressed by a chemical formula XB2, in which X includes at least one of Ti, Zr, Nb and Hf, a semiconductor buffer layer formed on a principal surface of the substrate and made of AlyGa1−yN (0<y≦1), and a nitride semiconductor layer which is formed on the semiconductor buffer layer and which includes at least one kind or plural kinds selected from among 13 group elements and As.
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Akasaki Isamu
Amano Hiroshi
Kamiyama Satoshi
Matsuda Toshiya
Yasuda Takanori
Hogan & Hartson LLP
Kyocera Corporation
Louie Wai-Sing
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