Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2011-03-22
2011-03-22
Le, Thao X (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C257S374000
Reexamination Certificate
active
07911023
ABSTRACT:
A semiconductor apparatus is disclosed. The semiconductor apparatus includes a semiconductor substrate that has a first surface and a second surface opposite to each other. The semiconductor apparatus further includes multiple double-sided electrode elements each having a pair of electrodes located respectively on the first and second surfaces of the semiconductor substrate. A current flows between the first and second electrode. Each double-sided electrode element has a PN column region located in the semiconductor substrate. The semiconductor apparatus further includes an insulation trench that surrounds each of multiple double-sided electrode elements, and that insulates and separates the multiple double-sided electrode elements from each other.
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Notification of Reason for Refusal mailed May 6, 2010 from the Japan Patent Office for corresponding patent application No. 2008-244841 (English translation enclosed).
Akagi Nozomu
Fujii Tetsuo
Yamaguchi Hitoshi
Denso Corporation
Ida Geoffrey
Le Thao X
Posz Law Group , PLC
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