Semiconductor apparatus having wiring groove and contact hole in

Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating

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Details

257649, 257774, H01L 23535

Patent

active

061630675

ABSTRACT:
A semiconductor apparatus and a process for fabricating the same according to the invention permit reduction in width of a wiring pattern of the semiconductor apparatus and in distance between wiring elements. A stopper film and an insulating film are provided on a substrate. The etching rate of RIE for the insulating film is greater than that for the stopper film. The stopper film and insulating film are formed on the insulating film. A pattern of the contact hole is formed in the stopper film. A wiring pattern is formed on the resist film. The insulating films are etched by RIE with the resist film and stopper film used as masks. Thus, a groove for formation of wiring and a contact hole for formation of a contact plug are simultaneously formed in a self-alignment manner.

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