Semiconductor apparatus having protective circuitry

Details Semiconductor apparatus having protective circuitry Semiconductor apparatus having protective circuitry

1996-06-27

1999-06-29

Ton, My-Trang Nu

Miscellaneous active electrical nonlinear devices, circuits, and

Gating

Signal transmission integrity or spurious noise override

327 18, H03K 1716

Patent

active

059173599

ABSTRACT:
The drain electrodes of HNMOS transistors (2) and (3) are connected to the first ends of resistors (4) and (5), and to the inputs of inverter circuits (6) and (7) respectively. The outputs of the inverter circuits (6) and (7) are connected to the inputs of a protection circuit (27). The outputs of the protection circuit (27) are connected to the set and reset inputs of a flip-flop circuit (10A). The protection circuit (27) serves to prevent the malfunction of the flip-flop circuit (10A) from occurring and is formed by a logic gate. Having this configuration high potential side power device driving circuit is provided wherein the pulse widths of signals input to the gate electrodes of transistors for level shift can be set optionally, the lag time of the signal is not caused by a passage through a filter circuit, and the malfunction of a flip-flop circuit can be prevented from occurring due to a dv/dt current without lowering the response performance of a power device.

REFERENCES:
patent: 4315168 (1982-02-01), Ohhinata
patent: 4705962 (1987-11-01), Kinoshita et al.
patent: 5105099 (1992-04-01), Routh et al.
patent: 5187632 (1993-02-01), Blessing
patent: 5351182 (1994-09-01), Miyazaki et al.
patent: 5514981 (1996-05-01), Tam et al.

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