Semiconductor apparatus having first and second gate electrodes

Details Semiconductor apparatus having first and second gate electrodes Semiconductor apparatus having first and second gate electrodes

2006-10-10

2006-10-10

Cao, Phat X. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

C257S278000, C257S347000

Reexamination Certificate

active

07119385

ABSTRACT:
A semiconductor apparatus includes a substrate, a buffer layer made of a monocrystal semiconductor material and formed on the substrate, a strained-Si layer formed on the buffer layer and having a lattice constant different from that of the buffer layer, a monocrystal insulating film formed on the strained-Si layer and made of a material having a rare earth structure with a lattice constant different from that of Si, and an electrode formed on the insulating film.

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Copy of Korean Patent Office Action entitled “Notification of Filing Opinion,” mailed by the Korean Patent Office on Feb. 21, 2006 in counterpart Korean Application No. 10-2003-51931.

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