Semiconductor apparatus having an n-channel MOS transistor and a

Details Semiconductor apparatus having an n-channel MOS transistor and a Semiconductor apparatus having an n-channel MOS transistor and a

1995-01-30

1996-03-12

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257383, 257388, 257412, H01L 2976, H01L 2348

Patent

active

054989086

ABSTRACT:
A semiconductor apparatus with MOS transistors for transmitting electrons from an n type source layer to an n type drain layer through a first channel region in an n-channel MOS transistor and transmitting holes from a p type source layer to a p type drain layer through a second channel region in a p-channel MOS transistor consists of a field oxide layer for separating the n-channel MOS transistor from the p-channel MOS transistor, an n type gate electrode mounted on a first gate oxide film arranged on the first channel region, a p type gate electrode mounted on a second gate oxide film arranged on the second channel region and positioned far away from the n type gate electrode to prevent impurities implanted into one of tile gate electrodes from diffusing into the other gate electrode, and a gate metal wiring connecting the gate electrodes through a gate contact hole to miniaturize the transistors.

REFERENCES:
patent: 5014104 (1991-05-01), Ema
patent: 5121174 (1992-06-01), Forgerson, II et al.
patent: 5191402 (1993-03-01), Kondo et al.

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