Semiconductor apparatus having adhesion layer and...

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S081000, C257S082000, C257S093000, C257S783000

Reexamination Certificate

active

07122834

ABSTRACT:
A semiconductor apparatus includes a substrate; an adhesion layer disposed on the substrate, the adhesion layer mainly consisting of semiconductor material; and at least one semiconductor thin film including at least one semiconductor device and bonded on the adhesion layer. The adhesion layer may be a polycrystalline silicon layer or an amorphous silicon layer.

REFERENCES:
patent: 5081513 (1992-01-01), Jackson et al.
patent: 5211761 (1993-05-01), Noguchi et al.
patent: 6232142 (2001-05-01), Yasukawa
patent: 6429070 (2002-08-01), Gonzalez et al.
patent: 6603146 (2003-08-01), Hata et al.
patent: 2002/0030197 (2002-03-01), Sugawara et al.
patent: 2002/0180861 (2002-12-01), Fukasawa
patent: 10-063807 (1998-06-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor apparatus having adhesion layer and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor apparatus having adhesion layer and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor apparatus having adhesion layer and... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3690610

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.