Semiconductor apparatus and process for producing the same,...

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means

Reexamination Certificate

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C257S628000, C257S079000

Reexamination Certificate

active

06882026

ABSTRACT:
In a semiconductor apparatus, a plurality of HBTs (heterojunction bipolar transistors) are formed on a front surface consisting of a (100) crystal plane of a GaAs substrate. Via holes passing thorough the GaAs substrate are formed in proximity of the HBTs. Each via hole has a rectangular-shaped hole edge at the front surface side of the GaAs substrate. The longitudinal direction of the hole edge on the surface side of the via hole is parallel to the [011] direction of crystal orientation of the GaAs substrate. A width of the via hole in a direction perpendicular to the [011] direction of crystal orientation is larger at the back surface of the substrate than at the front surface thereof.

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Chen et al., Parametric study of InP Backside processing using high frequency plasma etching, Conference Proceedings, 2000, pp. 186-189.

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