Semiconductor apparatus and process for fabricating same

Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material

Reexamination Certificate

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C257S359000, C257S581000, C257SE51005, C257SE51011, C257SE51015

Reexamination Certificate

active

07615775

ABSTRACT:
A semiconductor apparatus in which a conducting path formed from organic semiconductor molecules as a material has a novel structure and exhibits high mobility, and a manufacturing method for fabricating the same are provided. Fine particles that include a conductor or a semiconductor and organic semiconductor molecules, are alternately bonded through a functional group at both terminals of the organic semiconductor molecules to form a conducting path in a network form such that the conducting path in the fine particles and the conducting path in the organic semiconductor molecules are two-dimensionally or three-dimensionally linked together. This conducting path includes no intermolecular electron transfer, and the mobility is not restricted by the intermolecular electron transfer, and therefore the mobility of the conducting path along the main chain in the organic semiconductor molecules (in the direction of the axis of the molecule), for example, displays a high intramolecular mobility due to delocalized π electrons can be fully utilized.

REFERENCES:
patent: 5294820 (1994-03-01), Gemma et al.
patent: 6180956 (2001-01-01), Chondroudis et al.
patent: 6781166 (2004-08-01), Lieber et al.
patent: 7226966 (2007-06-01), Kambe et al.
patent: 2003/0112564 (2003-06-01), Granstrom
patent: 2005/0148179 (2005-07-01), Hirai et al.
patent: 0 865 078 (1998-09-01), None
patent: 1 022 560 (2000-07-01), None
patent: 1 215 205 (2002-06-01), None
patent: 64-089368 (1989-04-01), None
patent: 06-273811 (1994-09-01), None
patent: 2000-260999 (2000-09-01), None
patent: 96/07487 (1996-03-01), None
patent: 01/84714 (2001-11-01), None
Dimitrakopoulos et al., IBM J. Res. & Dev. (2001), 45, 11.
Schoen et al., Nature (2001), 413, 713.
Schoen et al., Appl. Phys. Lett. (2002), 80, 847.
Chang et al., “The Shape Transition of Gold Nanorods” Langmuir (1999), 15, 701-709.
Musick et al., Chem. Mater. (1997), 9, 1499.
Musick et al., Chem Mater. (2000), 12, 2869.
Brust et al., J. Chem. Soc., Chem. Commun., 801 (1994).
Leff et al., Langmuir 12, 4723 (1996).
Andres et al., J. Vac. Sci. Technol. A 14, 1178 (1996).
Chang et al., Langmuir 15, 701 (1999).
Hiroshi Yao et al., Chemistry Letters, 458 (2002).
Collet et al., Applied Physics Letters, vol. 76, pp. 1339-1341 (2000).
Matters et al., Optical Materials, vol. 12, pp. 189-197 (1997).
Gelinck et al., Applied Physics Letters, vol. 77, pp. 1487-1489 (2000).
Vullaume et al., Applied Physics Letters, vol. 69, pp. 1646-1648 (1996).
Ronald P. Andres et al., “Self-Assembly of a Two-Dimensional Superlattice of Molecularly Linked Metal Clusters,” Science, vol. 273, pp. 1690-1693, 1996.
Toshihiko Sato et al., “Dithiol-Linked Gold Colloidal Particles Used for Fabricating Single Electron Transistors,” Extended Abstracts of the 1997 International Conference on Solid State Devices and Materials, pp. 498-199, 1997.

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