Semiconductor apparatus and method of producing the same

Active solid-state devices (e.g. – transistors – solid-state diode – Encapsulated

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S126000, C438S127000, C257SE21502, C257SE23116

Reexamination Certificate

active

07741725

ABSTRACT:
With a semiconductor apparatus package of example embodiments of the technology disclosed herein and a method of producing the semiconductor apparatus package, the semiconductor apparatus package includes a circuit board and a semiconductor device sealed with sealing resin. The circuit board has a groove in a section of a surface of the circuit board. The section is outside of the resin sealing section, and the surface includes the resin sealing section. The groove is at least partially filled with sealing resin having seeped from a resin sealing section. Thus, in the semiconductor apparatus package including the circuit board, which is exposed from the resin sealing section, and the semiconductor device sealed on the circuit board with the sealing resin, the spread of a thin resin film onto that exposed circuit board resulting from seepage of resin sealing the semiconductor device is prevented.

REFERENCES:
patent: 5067008 (1991-11-01), Yanaka et al.
patent: 5461256 (1995-10-01), Yamada et al.
patent: 6365979 (2002-04-01), Miyajima
patent: 1-165495 (1989-06-01), None
patent: 5-160064 (1993-06-01), None
patent: 2002-237551 (2002-08-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor apparatus and method of producing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor apparatus and method of producing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor apparatus and method of producing the same will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4232777

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.