Semiconductor apparatus and method for producing the same

Details Semiconductor apparatus and method for producing the same Semiconductor apparatus and method for producing the same

1992-02-06

1993-11-30

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

257136, 257508, 257620, 257787, H01L 2934

Patent

active

052668320

ABSTRACT:
In a semiconductor apparatus and method for producing the same where an upper surface of a semiconductor chip having a thick film electrode is coated with a passivation film, the semiconductor chip being molded with a resin mold such as a power SIT, a conductive film made of a doped polysilicon, a metal material, or the like and which has a thickness of for example 3000 angstroms or more is circumferentially disposed from a bottom circumference of the thick film electrode to a part of region between a field oxide film and a passivation film so as to effectively prevent cracks in the passivation film caused by a cyclic temperature test from extending into the field oxide film.

REFERENCES:
patent: 4265685 (1981-05-01), Seki
patent: 4364078 (1982-12-01), Smith et al.
patent: 4625227 (1986-11-01), Hara et al.
patent: 4691224 (1987-09-01), Takada
patent: 4841354 (1989-06-01), Inaba
Jaume, D., et al., "High-Voltage Planar Devices . . . " IEEE Trans on Elec. Dev. Jul. 1991, pp. 1681-1684.

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