Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Having only two terminals and no control electrode – e.g.,...
Reexamination Certificate
2008-11-10
2010-06-15
Chen, Jack (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Having only two terminals and no control electrode , e.g.,...
C257S130000, C257S155000, C257S476000, C257S495000, C257SE29271
Reexamination Certificate
active
07737465
ABSTRACT:
The present invention provides a semiconductor apparatus for improving a switching speed and a withstand voltage, and a manufacturing method of the semiconductor apparatus. The semiconductor apparatus of the invention including a first conductive type semiconductor substrate, a first conductive type first semiconductor region with an impurity concentration lower than that of the semiconductor substrate and formed on a first principal surface of the semiconductor substrate, a second conductive type second semiconductor region formed in a surface region of the first semiconductor region and which forms a PN junction with the first semiconductor region, a contact region including a part of the first semiconductor region and a part of the second semiconductor region, an insulating layer having an opening part through which at least the contact region are exposed, a first electrode formed so as to be in contact with at least the contact region and a second electrode formed on a second principal surface of the semiconductor substrate, wherein the second semiconductor region, viewed from a direction perpendicular to the first principal surface includes a first region in which a plurality of islands of the second semiconductor are aligned with intervals and a second region which connects each end of the islands of the first region each other.
REFERENCES:
patent: 6936850 (2005-08-01), Friedrichs et al.
patent: 2002-246610 (2002-08-01), None
Chen Jack
McDermott Will & Emery LLP
Panasonic Corporation
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