Semiconductor apparatus and manufacturing method thereof

Semiconductor device manufacturing: process – Forming schottky junction

Reexamination Certificate

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C438S167000, C438S237000, C438S534000, C257SE21473

Reexamination Certificate

active

07994033

ABSTRACT:
The present invention provides a semiconductor apparatus for improving a switching speed and a withstand voltage, and a manufacturing method of the semiconductor apparatus. The semiconductor apparatus of the invention including a first conductive type semiconductor substrate, a first conductive type first semiconductor region with an impurity concentration lower than that of the semiconductor substrate and formed on a first principal surface of the semiconductor substrate, a second conductive type second semiconductor region formed in a surface region of the first semiconductor region and which forms a PN junction with the first semiconductor region, a contact region including a part of the first semiconductor region and a part of the second semiconductor region, an insulating layer having an opening part through which at least the contact region are exposed, a first electrode formed so as to be in contact with at least the contact region and a second electrode formed on a second principal surface of the semiconductor substrate, wherein the second semiconductor region, viewed from a direction perpendicular to the first principal surface includes a first region in which a plurality of islands of the second semiconductor are aligned with intervals and a second region which connects each end of the islands of the first region each other.

REFERENCES:
patent: 6936850 (2005-08-01), Friedrichs et al.
patent: 7615839 (2009-11-01), Souma et al.
patent: 7737523 (2010-06-01), Kikuchi et al.
patent: 2006/0220166 (2006-10-01), Kikuchi et al.
patent: 1855549 (2006-11-01), None
patent: 2002-246610 (2002-08-01), None
Chinese Office Action, with English Translation, issued in Chinese Patent Application No. 2008101827406, dated Mar. 29, 2011.

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