Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Reexamination Certificate
2007-12-17
2010-10-19
Wilczewski, Mary (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With contact or lead
C257S750000, C257S778000, C257SE23010, C257SE23018
Reexamination Certificate
active
07816780
ABSTRACT:
A technique capable of improving reliability of a semiconductor apparatus is provided. A semiconductor device having a metal electrode on at least one principal surface and a die pad (a metal member) electrically connected to the metal electrode via conductive resin composed of base resin (an organic binder) mixed with a Ag particle (metal powder) including precious metal are provided, and a configuration is made so that a porous nano-particle coat film (a precious metal layer) having an Ag (precious metal) nano particle fired on a metal surface is formed on at least one of mutually opposed surfaces of the metal electrode and the die pad.
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Translation of JP 2005-340279 (from PAJ).
Ukita et al. “Application of Conductive Paste Containing Silver Nanoparticles,” 11th Symposium on Microjoining and Assembly Technology in Electronics, pp. 233 to 238, (Feb. 2005).
Ito Kazutoshi
Kajiwara Ryoichi
Renesas Electronics Corporation
Townsend and Townsend / and Crew LLP
Wilczewski Mary
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