Semiconductor apparatus

Details Semiconductor apparatus Semiconductor apparatus

1995-04-14

1998-12-29

Kunemund, Robert

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Including passive device

438331, 438332, 438385, H01L 2120

Patent

active

058541160

ABSTRACT:
The present invention relates to a semiconductor apparatus adapted to a ultrahigh density integration process.
A semiconductor apparatus of the present invention is characterized by including a high concentration impurity layer with the same type of conductivity as that of a semiconductor wafer provided on the back of the semiconductor wafer, and at least one layer of a low resistance electrode provided on said high concentration impurity layer.

REFERENCES:
patent: 3451912 (1969-06-01), D'Heurle et al.
Colclaser, Microelectronics: Processing and Device Design, Wiley & Sons 1980, p. 119.
Wolf, Silicon Processing for the VLSI Era, vol. 1, Lattice Press, 1986, pp. 384-386.

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