Semiconductor apparatus

Metal working – Method of mechanical manufacture – Assembling or joining

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Details

29577C, 29578, 357 42, B01J 1700

Patent

active

042350115

ABSTRACT:
A method for fabricating a field-effect transistor device is provided with the device resulting having a relatively substantial capability to withstand reverse bias voltages. The device can also be provided having a relatively low "on" condition resistance between the source and drain terminals thereof by virtue of a geometrical design choice.

REFERENCES:
patent: 3427514 (1969-02-01), Olmstead
patent: 3855610 (1974-12-01), Masuda
patent: 3909306 (1975-09-01), Sakamoto
patent: 3984822 (1976-10-01), Simko
patent: 4015278 (1977-03-01), Fukuta
patent: 4016587 (1977-04-01), De La Moneda
patent: 4131908 (1978-12-01), Daub
patent: 4182636 (1980-01-01), Dennard

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