Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With specified electrode means
Reexamination Certificate
2006-04-26
2009-12-08
Gurley, Lynne A. (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With specified electrode means
C257SE27078
Reexamination Certificate
active
07629669
ABSTRACT:
A semiconductor apparatus includes a first transistor having a first emitter electrode, a first base electrode, and a first collector electrode in a region over a first region. Base lead-out polysilicon connecting the first base electrode and a first base region passes over a second region provided out of the first region and a resistor element is added. A writing voltage is reduced in an antifuse using two bipolar transistors.
REFERENCES:
patent: 6218722 (2001-04-01), Cervin-Lawry et al.
Ishikawa Koji
Kogayu Hiroshige
Kusunoki Mitsugu
Miyake Tamotsu
Mori Kazutaka
Arena Andrew O
Gurley Lynne A.
Hitachi , Ltd.
Miles & Stockbridge P.C.
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