Semiconductor apparatus

Details Semiconductor apparatus Semiconductor apparatus

2007-01-30

2007-01-30

Potter, Roy (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S734000, C257S774000

Reexamination Certificate

active

11115407

ABSTRACT:
A disclosed semiconductor apparatus includes a substrate, a first insulating layer formed on the substrate, the first insulating layer including a Cu wiring part, and a second insulating layer formed on the substrate, the second insulating layer including a Cu via plug part electrically connected to the Cu wiring part. The first insulating layer is a porous insulating film having an elastic modulus of 5 GPa or more and a hardness of 0.6 GPa or more, and the second insulating layer has an elastic modulus of no less than 10 GPa and a hardness no less than 1 GPa.

REFERENCES:
patent: 5880018 (1999-03-01), Boeck et al.
patent: 6410462 (2002-06-01), Yang et al.
patent: 6482733 (2002-11-01), Raaijmakers et al.
patent: 6627540 (2003-09-01), Lee
patent: 2001-274239 (2001-10-01), None
patent: 2002-164428 (2002-06-01), None
patent: 2002-305193 (2002-10-01), None
patent: WO 00/13221 (2000-03-01), None
“Applied Physics” vol. 68, No. 11, 1999, pp. 1214-1278, ULSI Multilayer Wiring Technology.

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