Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – For high frequency device
Reexamination Certificate
2006-11-07
2006-11-07
Loke, Steven (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
For high frequency device
C257S704000, C257S691000, C257S678000, C257S701000, C257S706000, C257S710000, C257S758000, C257S698000, C257S707000
Reexamination Certificate
active
07132748
ABSTRACT:
A semiconductor apparatus is provided in which input/output of an electric signal having a particularly high frequency is less disturbed by parasitic capacitance generated in a wiring in the semiconductor apparatus. A first through-hole wiring penetrating a first dielectric board, a second through-hole wiring penetrating a second dielectric board, and an internal wiring inserted between the first dielectric board and the second dielectric board are provided. The first through-hole wiring and the second through-hole wiring are arranged on the internal wiring while being away from each other.
REFERENCES:
patent: 5982250 (1999-11-01), Hung et al.
patent: 6020637 (2000-02-01), Karnezos
patent: 6255739 (2001-07-01), Adachi et al.
patent: 5-129462 (1993-05-01), None
patent: 7-50362 (1995-02-01), None
Im Junghwa
Loke Steven
Oki Electric Industry Co. Ltd.
Wenderoth , Lind & Ponack, L.L.P.
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