Semiconductor annealing device

Details Semiconductor annealing device Semiconductor annealing device

1983-04-15

1984-11-13

Hearn, Brian E.

Metal treatment

Compositions

Heat treating

29576T, H01L 21324

Patent

active

044823959

ABSTRACT:
An annealing method wherein an elongated irradiation area is formed by a light source whose emitted light is controlled so that a peak curve of the illuminance distribution in the area may be substantially linear and that equiluminous curves near the peak curve may be substantially parallel therewith. A semiconductor wafer and the irradiation area are moved relative to each other in such a manner that the entire area of the semiconductor wafer to be annealed may cross all the equiluminous curves, thereby to achieving the annealing of the semiconductor wafer. With this annealing method, semiconductor crystals are satisfactorily recovered from damages incidental to ion implantation into the semiconductor wafer and polycrystalline or amorphous semiconductors are converted into single crystal semiconductors of good quality.

REFERENCES:
patent: 3763348 (1973-10-01), Costello
patent: 4151008 (1979-04-01), Kirkpatrick
patent: 4238685 (1980-12-01), Tischer
patent: 4331485 (1982-05-01), Gat
patent: 4356384 (1982-10-01), Gat

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