Semiconductor annealing by pulsed heating

Details Semiconductor annealing by pulsed heating Semiconductor annealing by pulsed heating

1980-10-09

1982-09-21

Roy, Upendra

Metal treatment

Compositions

Heat treating

29585, 29586, 148187, 357 91, 427 531, H01L 21265, H01L 2126

Patent

active

043505376

ABSTRACT:
A process for annealing crystal damage in ion implanted semiconductor devices in which the device is rapidly heated to a temperature between 450.degree. and 900.degree. C. and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device (17) may be heated on a graphite element (14) mounted between electrodes (15) in an inert atmosphere in a chamber (11). The process may be enhanced by the application of optical radiation from a Xenon lamp (19).

REFERENCES:
patent: 4151008 (1979-04-01), Kirkpatrick
patent: 4154625 (1979-05-01), Golovchenko et al.
Cohen et al. Appl. Phys. Letts. 33, (Oct. 1978), 751.
Ryssel et al. in Ion Implantation in Semiconductors, Ed. S. Namba, Plenum, N.Y. 1974, pp. 169-176.
Dearnaley et al. (Eds.), Ion Implantation North-Holland, 1973, pp. 421-427.
Bomke et al. Appl. Phys. Letts., 33, (1978), 955.

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