Semiconductor and method of semiconductor fabrication

Details Semiconductor and method of semiconductor fabrication Semiconductor and method of semiconductor fabrication

2006-11-21

2010-06-08

Soward, Ida M (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

C257S096000, C257S097000, C257S103000, C257S101000

Reexamination Certificate

active

07732826

ABSTRACT:
The present invention discloses a semiconductor, includes one or more luminescent layers; and one or more electron gas layers with two-dimensional electron gases that are distributed parallel to the luminescent layers.

REFERENCES:
patent: 5677553 (1997-10-01), Yamamoto et al.
patent: 2002/0195606 (2002-12-01), Edmond et al.
patent: 2004/0004223 (2004-01-01), Nagahama et al.
patent: 2004/0016932 (2004-01-01), Kondo
patent: 2007/0176531 (2007-08-01), Kinoshita et al.
patent: 1560275 (2005-08-01), None
patent: 2428681 (2007-02-01), None
patent: WO2005/090515 (2005-09-01), None
The extended European search report, pursuant to Rule 44a EPC dated Apr. 16, 2007, searched on Mar. 19, 2007.
Nitride-Based LEDS With Modulation-Doped AL0.12GA0.88N-GAN Superlattice Structures.
The European examination dated Feb. 25, 2009.
Heikman S, et al: “High Conductivity modulation doped AIGaN/GaN multiple channel heterostructures”.

Affiliated with

Also associated with

Rating

Semiconductor and method of semiconductor fabrication does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor and method of semiconductor fabrication, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor and method of semiconductor fabrication will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4239651