Amplifiers – With semiconductor amplifying device – Including distributed parameter-type coupling
Patent
1992-03-24
1993-12-14
Mullins, James B.
Amplifiers
With semiconductor amplifying device
Including distributed parameter-type coupling
330277, 330307, H03F 3193
Patent
active
052706680
ABSTRACT:
A small-sized, high-efficiency semiconductor amplifier exhibits a satisfactory efficiency characteristic over a wide band and a low output level for secondary and tertiary higher harmonics. The semiconductor amplifier is equipped with an output circuit which is composed of a parallel resonance circuit for the secondary higher harmonic of the fundamental-operation frequency, a first connection line, a second connection line, and an open-end line having a length corresponding to approximately 1/4 of the wavelength of the tertiary higher harmonic, the drain terminal of FETs leading to the output circuit being connected to one end of the parallel resonance circuit through the first connection line, an open point being formed at one end of the parallel resonance circuit, the other end of the parallel resonance circuit for the secondary higher harmonic being connected to the open-end line having a length corresponding to approximately 1/4 of the wavelength of the tertiary higher harmonic through the second connection line, the length and width of the first connection line being adjusted to determine the secondary-higher-harmonic load-reflection coefficient of the FETs as seen from the drain thereof to such a value as will maximize the efficiency of the amplifier, the length and width of the second connection line being appropriately adjusted so as to adjust the impedance matching conditions with respect to the fundamental wave.
REFERENCES:
patent: 4717884 (1988-01-01), Mitzlaff
patent: 5146178 (1992-09-01), Nojima et al.
Ikeda Yukio
Seino Kiyoharu
Takagi Tadashi
Toyoshima Gen
Mitsubishi Denki & Kabushiki Kaisha
Mullins James B.
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