Semiconductor AlGaInP light emitting device

Details Semiconductor AlGaInP light emitting device Semiconductor AlGaInP light emitting device

1998-05-15

2000-08-22

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

257 96, 257 97, 257102, 257103, 438 46, 438 47, H01L 3300

Patent

active

061076473

ABSTRACT:
A semiconductor light emitting device has a light emitting layer forming portion formed on the substrate and having an n-type layer and a p-type layer to provide a light emitting layer. A window layer is formed on a surface side of the light emitting layer forming portion. The window layer is formed of AlyGal-yAs (0.6.ltoreq.y.ltoreq.0.8) auto-doped in a carrier concentration of 5.times.10.sup.18 -3.times.10.sup.19 cm.sup.-3. The resulting semiconductor light emitting device is free of degradation in crystallinity due to p-type impurity doping, thereby provide a high light emitting efficiency and brightness without encountering device degradation or damage.

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patent: 5410159 (1995-04-01), Sugawara et al.
patent: 5614734 (1997-03-01), Guido
patent: 5821569 (1998-10-01), Dutta

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