Semiconductor acceleration sensor

Details Semiconductor acceleration sensor Semiconductor acceleration sensor

1997-10-30

1999-04-13

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Responsive to non-optical, non-electrical signal

257417, 257418, 257419, 257420, 73717, 73722, 73728, 73DIG1, 7350412, 7351429, 7351418, H01L 2982

Patent

active

058941444

ABSTRACT:
In a semiconductor acceleration sensor, a weight and thin beam parts adjacent to the weight are formed on a substrate, a moving electrode is formed on the weight, and a fixed electrode is formed at a position of the other substrate opposed to the moving electrode. Both the electrodes come in contact with each other and conduct as a result of acceleration on the weight, whereby the semiconductor acceleration sensor operates. The fixed electrode or the moving electrode is formed with a projection toward the opposed electrode and the projection and the electrode come in contact with each other and conduct by action of acceleration with a predetermined spacing held between both the electrodes for preventing occurrence of chattering caused by the electrostatic attraction force between both the electrodes.

REFERENCES:
patent: 4932261 (1990-06-01), Henrion
patent: 5177579 (1993-01-01), Jerman
patent: 5205171 (1993-04-01), O'Brien et al.
patent: 5353641 (1994-10-01), Tang
patent: 5391283 (1995-02-01), Shimada et al.
patent: 5659195 (1997-08-01), Kaiser et al.

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