Semiconductor absolute pressure transducer assembly and method

Electrical resistors – Strain gauge type – Fluid- or gas pressure-actuated

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29610SG, 338 42, G01L 122

Patent

active

042951151

ABSTRACT:
A semiconductor absolute pressure transducer assembly has a silicon diaphragm assembly and a covering member. The silicon diaphragm assembly has a circular pressure sensitive diaphragm, on the surface of which are diffused piezoresistors and conducting paths. The covering member composed of borosilicate glass has a circular well formed therein. On the surface of the silicon diaphragm assembly on which the piezoresistors and the conducting paths are diffused, a passivating layer of silicon dioxide is deposited. Further on the passivating layer, a conductive layer is formed by, for example, evaporating silicon. And the glass covering member is bonded on the silicon diaphragm assembly by anodic bonding. Namely, the silicon diaphragm assembly and the glass covering member are heated up to a certain high temperature and a relative high voltage applied across the conductive layer of the silicon diaphragm assembly and the glass covering members.

REFERENCES:
patent: 3397278 (1968-08-01), Pomerantz
patent: 3697917 (1972-10-01), Orth et al.
patent: 4019388 (1977-04-01), Hall et al.
patent: 4023562 (1977-05-01), Hynecek et al.
patent: 4040172 (1977-08-01), Kurtz et al.

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