Electrical resistors – Strain gauge type – Fluid- or gas pressure-actuated
Patent
1979-04-04
1981-10-13
Albritton, C. L.
Electrical resistors
Strain gauge type
Fluid- or gas pressure-actuated
29610SG, 338 42, G01L 122
Patent
active
042951151
ABSTRACT:
A semiconductor absolute pressure transducer assembly has a silicon diaphragm assembly and a covering member. The silicon diaphragm assembly has a circular pressure sensitive diaphragm, on the surface of which are diffused piezoresistors and conducting paths. The covering member composed of borosilicate glass has a circular well formed therein. On the surface of the silicon diaphragm assembly on which the piezoresistors and the conducting paths are diffused, a passivating layer of silicon dioxide is deposited. Further on the passivating layer, a conductive layer is formed by, for example, evaporating silicon. And the glass covering member is bonded on the silicon diaphragm assembly by anodic bonding. Namely, the silicon diaphragm assembly and the glass covering member are heated up to a certain high temperature and a relative high voltage applied across the conductive layer of the silicon diaphragm assembly and the glass covering members.
REFERENCES:
patent: 3397278 (1968-08-01), Pomerantz
patent: 3697917 (1972-10-01), Orth et al.
patent: 4019388 (1977-04-01), Hall et al.
patent: 4023562 (1977-05-01), Hynecek et al.
patent: 4040172 (1977-08-01), Kurtz et al.
Hachino Hiroaki
Kawakami Kanji
Minorikawa Hitoshi
Misawa Yutaka
Nishihara Motohisa
Albritton C. L.
Hitachi , Ltd.
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